Bhusana Premanode
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Visiting Professor Bhusana Premanode, Imperial College London
Dr Bhusana Premanode holds two PhD degrees from Imperial College London, one in Electrical engineering and the other in Biomedical engineering. Dr Bhusana did extensive research from 2002 to 2007 in Ion Sensitive Field Effect Transistors (ISFET) while he was a visiting professor at Imperial College London. He, Professor Chris Toumazou and De Leila Shepherd have registered an ISFET patent, which was used in the design of a series of commercial ultra-low power microchip healthcare monitoring devices. The final design was later marketed under the brand name Sensium. Dr Bhusana also designed an ISFET with negative global feedback, creating the first chemical CMOS using negative feedback connecting to the source terminal, not to the gate terminal. Building upon his ISFET research, Dr Bhusana went on to develop a wide dynamic range ISFET which is used for measuring Urea and Creatinine in peritoneal dialysis. This invention has the potential to be further developed into an implant for peritoneal dialysis. Between the years 2008 to 2013, Dr Bhusana designed a novel digital filter based on averaging Intrinsic Mode Function (aIMF). This digital filter, with its superior denoising and smoothing capability, has widespread applications involving nonlinear nonstationary time series data, such as in biomedical, signal processing, prediction of financial indices etc. In conjunction with his research in digital filters, Dr Bhusana also developed a Multiclass Kernel Function using coefficient of variance and mean reversion that significantly enhances the accuracy of machine learning such as Support vector Machine (SVM). In 2012 Dr Bhusana consulted for the Petroleum Authority of Thailand (PTT) on a project “Automatic Viscosity Reduction System for Bitumen” that simulated the molecular dynamics of asphaltenes and studied the energy transfer and molecular binding structures of bitumen. PTT has invested substantially in oil sands (bitumen) in Canada, and this project has the potential to significantly reduce the carbon footprint and cost of transportation of bitumen via pipelines. Dr Bhusana is the founder and director of The Institute of Social and Economic Policy (ISEP) in Thailand (www.isepthailand.com). ISEP is a NGO and consults regularly for various governmental organisations in Thailand. Dr Bhusana himself has published more than 30 papers in various international journals. Dr Bhusana is the author of “CMOS Biosensor for Peritoneal Dialysis”, published in 2011 by Lambert Academic Publishing. Enclosed are novelties in biomedical engineering and financial engineering.
1. Registered patent for ion sensitive field effect transistors
US 20100159461 A1 Publication number US20100159461 A1 Publication type Application Application number US 12/591,847 Publication date Jun 24, 2010 Filing date Dec 2, 2009 Priority date Jul 13, 2004 Inventors Christofer Toumazou, Bhusana Premanode, Leila Shepherd
Original Assignee Dna Electronics Ltd.
The ion-sensitive field effect transistor (ISFET) is based on a MOSFET with a remote gate (or “reference electrode”) lying beneath a chemically-sensitive insulator. The surface of the insulator is exposed to an electrolyte upon which measurements are to be made. The insulator in contact with the electrolyte is chosen according to its chemical properties and sensitivity to a particular ion. For example, the insulator surface may be the gate oxide in ISFETs fabricated in a dedicated process which removes the polysilicon gate contact, or can be the Si3N4 passivation layer inherent in the mass-producible CMOS process, where the polysilicon gate is left electrically floating and coupled to the sensing area via a metal stack. The rest of the transistor is encapsulated to isolate the bond wires from the electrolyte. For ISFETs designed to measure the pH of an electrolyte, i.e. the H+ ion content of the electrolyte, silicon nitride and aluminium oxide membranes are commonly used to insulate the gate. ISFETs can be made sensitive to ions other than H+ through the choice of the ion-sensitive membrane, thus adding an element of ion-selectivity. ISFETs whose membrane is modified to be selective to a particular ionic species are known as ChemFETs, with a further variation, known as EnFETs, using enzymes in close proximity to the membrane surface. It has also been shown that even conventional pH-ISFETs with unmodified Si3N4 membranes exhibit a limited but measurable sensitivity to K+ and Na+ ions. This said, practical and commercial applications of the ISFET for applications other than pH sensing are rare. Nonetheless, in the following discussion, the term ISFET is used both specifically to refer to a pH sensor and generally to refer to all ion and enzyme sensitive FETs operating on similar principles. The attractiveness of ISFETs and their FET-based counterparts is that they are compatible with the standard fabrication processes used to mass produce computer chips and can therefore be reliably and cost-effectively produced. Importantly, processing circuitry can be integrated onto the same chip as the ISFET device itself. The integration of intelligent circuitry with the sensing device itself is what is required for the development of so-called “smart sensors” which require robustness to non-ideal sensing conditions, as well as to provide electronics to discriminate between chemicals “on-chip”. ISFET can be used as smart sensing whose concepts based on weak inversion operation of the transistor applications beyond chemical discrimination using the selectivity of the membranes include: • Real-time reaction monitoring and analytical data processing • DNA-sequencing • Fast acid-base titrations using kinetic models to extract the analytical information sought, well before reaching the equivalence point • Implementation of “chemical decision trees” using ISFETs and other sensors directly as logic (true/false) devices with adjustable thresholds • Medical diagnostics using real-time monitoring of blood and urine metabolite ratios • Neural bridges • Impurity detection In addition to its suitability for use in a transducer input stage, the ISFET operating in the weak inversion can provide a basic building block for the digital processing of chemically related signals.
Reference:
[1] Toumazou, C., Premanode, B., and Shepherd, L. (2010). Ion Sensitive Field Effect Transistors. United States Patent Application Publication, Pub. No.: US2010/0159461 A1, Pub. Date Jun. 21. [2] https://intranet.ee.ic.ac.uk/electricalengineering/eepeople/person.asp?f=sc&c=ALL&s=NIL&id=4875 [3] http://www3.imperial.ac.uk/bioinspiredtechnology/people
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