ETA RAM
ETA-RAM is a trademark for a novel random access memory (RAM) computer memory technology developed by Eta Semiconductor.[1] ETA-RAM improves both cost and power consumption by combining the advantages of dynamic random access memory (DRAM) and static random access memory (SRAM): it has the lower cost of existing DRAMs, lower power dissipation, and higher performance than SRAMs. The cost advantages come from a simpler process technology and significantly reduced cell silicon area: an ETA-RAM cell requires about the same silicon area as modern DRAM devices. Improved power dissipation results from reduced current used for reading and writing data bits, and elimination of refresh requirements. ETA-RAM also offers higher writing and reading data rates than the standard six-transistor SRAM cell used in cache memory. To combine these advantages, Eta Semiconductor developed a new approach. Static memory cells are built using a single, minimum-dimension process structure that performs the same function as a conventional SRAM.[2] This is achieved using a new CMOS technology for high-density integrated circuits, invented by the founders of Eta Semiconductor. This technology, called ETA CMOS, creates novel structures that simultaneously perform the functions of traditional transistors, using metal junctions and stacked gates.
References
External links
- Eta Semiconductor develops novel memory technology
- ETA RAM Emerging Memory Technology and Development
This article "ETA RAM" is from Wikipedia. The list of its authors can be seen in its historical. Articles copied from Draft Namespace on Wikipedia could be seen on the Draft Namespace of Wikipedia and not main one.
