Induced high electron mobility transistor
An induced high electron mobility transistor is a form of high electron mobility transistor (HEMT) which provides the flexibility to tune different electron densities with top gate. This is because the charge carriers are "induced" to the 2DEG plane rather than created by dopants. Compared to their modulation-doped counterparts, the absence of a doped layer enhances the electron mobility significantly.
This level of cleanliness provides research opportunities in the field of Quantum Billiard for quantum chaos studies, or applications in ultra stable and ultra sensitive electronic devices.
Researchers from the Quantum Electronic Devices Group (QED) at the Condensed Matter Physics Department, School of Physics at the University of New South Wales have created both n-type and p-type HEMT for studying fundamental quantum physics of electronic devices.
External links[edit]
This article "Induced high electron mobility transistor" is from Wikipedia. The list of its authors can be seen in its historical. Articles copied from Draft Namespace on Wikipedia could be seen on the Draft Namespace of Wikipedia and not main one.
