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Krishna Shenai

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Krishna Shenai
BornKrishna Shenai
Katapady, Karnataka State, India
🎓 Alma mater
  • IIT - Madras, India (B. Tech.)
  • University of Maryland (M.S.)
  • Stanford University (Ph.D.)
💼 Occupation
Known forSemiconductor metallization, power devices, semiconductor reliability
🏅 Awards
  • Distinguished Lecturer (1994-2014), IEEE Electron Device Society;
  • University Scholar (1998-2001), University of Illinois;
  • Distinguished Lecturer (2017-2020), IEEE Power Electronics Society
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Krishna Shenai is an Indian-born electrical engineer. He is best known for pioneering research in developing semiconductor technologies used in the manufacture of signal, power and communication electronics products.

Education and Professional Career[edit]

Krishna Shenai was born in Katapady - a small village in the southern state of Karnataka in India. Shenai moved to the US in 1979 after obtaining the B. Tech. degree in electronics from The Indian Institute of Technology - Madras. He received his MS in 1981 from The University of Maryland – College Park and PhD in 1986 from Stanford University, both in electrical engineering.[1]

During a professional career that spans over 40 years, Shenai has worked as a practicing engineer in industry (COMSAT Labs, GE Research, Intel and Argonne National Labs), as a teacher in academia (University of Wisconsin - Madison, University of Illinois - Chicago, Utah State University, and University of Toledo), and as an entrepreneur. He established and directed the Power Electronics Reliability Group (PERG) at The University of Illinois - Chicago[2], chaired the Electrical Engineering and Computer Science (EECS) department at The University of Toledo, and held the Utah Science Technology and Research (USTAR) endowed professorship at Utah State University.[3]

Research[edit]

Shenai has made major research contributions to advance semiconductor contacts and interconnect technologies, silicon and wide bandgap (WBG) semiconductor power devices, compact power supplies, rf power amplifiers and power converter reliability. As of 2021 Shenai holds 12 issued US patents and has authored over 400 archived research publications in international journals and conference records.

Awards and Honors[edit]

  • Fellow of Institution of Electrical and Electronics Engineers (IEEE)[4]
  • Fellow of American Physical Society (APS)[5]
  • Fellow of American Association for the Advancement of Science (AAAS)[6]
  • Foreign Member, Academy of Engineering Sciences of Serbia (AESS)[7]

References[edit]

  1. Shenai, Krishna (2019). "High-Density Power Conversion and Wide-Bandgap Power Electronics Switching Devices". Proceedings of the IEEE. 107 (12): 2308–2326. doi:10.1109/JPROC.2019.2948554.
  2. Shenai, Krishna; Dudley, Michael and; Davis, Robert F. (2013). "Rugged Electrical Power Switching in Semiconductors: A Systems Approach". Proceedings of the IEEE. 102 (1): 35–52. doi:10.1109/JPROC.2013.2278616.
  3. "USU, U. putting USTAR research funding to work". Deseret News, Jan. 27, 2007. Retrieved September 26, 2021.
  4. "IEEE Fellows Directory". IEEE. Retrieved September 26, 2021.
  5. "APS Fellow Archive". APS. Retrieved September 26, 2021.
  6. "AAAS Fellows" (PDF). AAAS. Retrieved September 26, 2021.
  7. "AESS Foreign Members". AINS. Retrieved September 26, 2021.


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