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Silicon carbide photonics

From EverybodyWiki Bios & Wiki

  • Comment: The version as of July 6th reads as an advertisement for the merits of SiC, not as a neutral point if view encyclopedic article. Please rewrite. Ldm1954 (talk) 14:01, 6 July 2026 (UTC)



File:SiCOI waveguide.png
Schematic cross-section of a silicon carbide (SiC core) on insulator (SiO2 cladding) optical waveguide.

Silicon carbide photonics is the branch of semiconductors photonics concerned with the use of silicon carbide (SiC) for the generation, manipulation, transmission and detection of light in integrated optical devices and photonic integrated circuits (PICs). Research in silicon carbide photonics has expanded rapidly[weasel words] since the early 2000s as SiC emerged[weasel words] as an alternative material platform to silicon photonics.[1] Compared with silicon (Si), silicon carbide combines a wider optical transparency window, high optical damage threshold, favorable[weasel words] nonlinear optical properties and compatibility with semiconductor micro and nanofabrication technologies originally developed for power electronics.[2]

Silicon carbide exists in numerous[vague] crystalline forms (called polytypes or polymorphs), of which 3C-SiC, 4H-SiC and 6H-SiC are the most widely studied for photonic and electronic applications.[3] Their different crystal structures result in distinct optical and electronic properties, allowing them to be tailored to a broad range of photonic devices.[4][5] In addition to classical and nonlinear photonic components, silicon carbide has attracted significant interest[peacock prose] for quantum technologies because several polytypes host optically active color centers that function as single-photon emitters and spin qubits.[6] These properties have made SiC a promising platform for applications including nonlinear optics, optical communications, quantum photonics and integrated quantum information processing.[7][8]

Silicon carbide as a photonic platform

Comparison with silicon photonics

Silicon is the dominant[weasel words] material platform for photonic integrated circuits, owing to its compatibility with complementary metal-oxide-semiconductor (CMOS) fabrication processes and the mature manufacturing infrastructure developed for the microelectronics industry, which allow cost-effective and large-scale manufacturing. Despite its widespread adoption, silicon exhibits several intrinsic material limitations for photonic and optoelectronics applications. As an indirect-bandgap semiconductor, silicon is an inefficient light emitter, making the development of on-chip light sources impractical. Its bandgap of approximately 1.1 eV limits optical transparency to wavelengths longer than about 1.1 μm, while strong two-photon absorption (TPA) at telecommunication wavelengths reduces the efficiency of nonlinear optical devices. In addition, silicon has a centrosymmetric crystal structure and therefore lacks second-order optical nonlinearity, preventing effects such as the Pockels effect and efficient on-chip second-harmonic generation.[9]

Silicon carbide has emerged as one of several alternative material platforms for integrated photonics, alongside silicon nitride, lithium niobate, diamond and III-V semiconductors. It combines a broad optical transparency window, high optical damage threshold, favorable nonlinear and quantum optical properties, and compatibility with semiconductor fabrication techniques originally developed for SiC power electronics.[10]

Optical properties

Silicon carbide is a wide-bandgap semiconductor whose optical and electronic properties depend on the crystal polytype. The bandgap ranges from approximately 2.36 eV for 3C-SiC to 3.26 eV for 4H-SiC, resulting in optical transparency extending from the visible or near-ultraviolet to the mid-infrared, considerably broader than that of silicon. The refractive index of SiC lies between approximately 2.5 and 2.7 at telecommunications wavelengths, enabling strong optical confinement in integrated waveguides while remaining compatible with silicon dioxide claddings.[11]

Considering nonlinear optical properties, silicon carbide exhibits both third-order and second-order nonlinear susceptibilities. Compared with silicon, SiC experiences substantially weaker two-photon absorption at telecommunications wavelengths, leading to a more favorable nonlinear figure of merit for applications including frequency conversion, optical parametric processes and Kerr nonlinear optics.[12][13]

In addition to its optical properties, SiC possesses high thermal conductivity, excellent chemical stability and high optical damage threshold, making it suitable for high-power and harsh-environment optoelectronic devices.[14]

Polytypes

Main article: Polymorphs of silicon carbide

Silicon carbide occurs in more than 250 known polytypes, which differ in the stacking sequence of silicon-carbon bilayers while sharing the same chemical composition. Among these, cubic 3C-SiC and the hexagonal 4H- and 6H-SiC polytypes are the most widely investigated for integrated photonics.[15] The different crystal structure gives rise to distinct nonlinear optical properties and the choice of polytype consequently depends on the intended application.[16]

Quantum photonics

In addition to classical photonic applications, silicon carbide is extensively investigated as a platform for integrated quantum photonics. Several SiC polytypes can host optically active point defects, commonly known as color centers, which act as stable single-photon emitters and spin qubits.[17][18]

Unlike many other photonic materials, SiC combines passive optical components, nonlinear optical functionality and relevant quantum features within the same semiconductor platform. This enables the monolithic integration of waveguides, optical resonators and color centers without the heterogeneous material integration required by many competing technologies.[6] Among the available polytypes, 4H-SiC is particularly interesting for quantum photonics because it hosts color centers with long spin coherence times and stable optical transitions.[19]

Manufacturing compatibility

One of the principal advantages of silicon carbide is the availability of an industrial manufacturing infrastructure originally developed for high-power electronic devices. High-quality single-crystal substrates are commercially available in several polytypes, and mature fabrication techniques—including epitaxial growth, thermal oxidation, ion implantation, plasma etching and chemical mechanical polishing—can be adapted to the fabrication of photonic integrated circuits.[20][21]

Furthermore, thin-film platforms such as silicon carbide-on-insulator (SiCOI) enable the fabrication of low-loss waveguides, high-quality-factor microresonators and photonic crystal cavities using processes largely compatible with established semiconductor manufacturing technologies.[22]

Silicon carbide substrates

Silicon carbide photonic and electronic devices are fabricated either on bulk single-crystal SiC substrates or on thin-film SiCOI platforms. Bulk wafers provide the starting material for epitaxial growth and device fabrication, whereas SiCOI substrates offer strong optical confinement through the presence of a low refractive index silicon oxide layer. The availability of high-quality wafers has been a key factor in the development of integrated SiC photonics.[3]

Bulk SiC wafers

Commercial SiC wafers are produced primarily for the power electronics industry and are available in the 4H-SiC, 6H-SiC, and 3C-SiC polytypes.[11]

File:SiC wafers 6inch.jpg
6-inch SiC wafers.

Physical vapor transport (PVT), also known as the modified Lely method, is the most widely used technique for producing bulk single-crystal SiC wafers. In this process, SiC powder is heated to temperatures above 2000 °C inside a graphite crucible, where it sublimates into gaseous silicon- and carbon-containing species. These species recrystallize on a SiC seed crystal, producing a large single-crystal boule that is subsequently sliced and polished into wafers.[11]

Chemical vapor deposition (CVD) is widely employed to grow high-quality homoepitaxial and heteroepitaxial SiC layers on bulk substrates. Silicon- and carbon-containing precursor gases are introduced into a high-temperature reactor, where they react to form crystalline SiC on the wafer surface. Epitaxial growth enables precise control over layer thickness, doping concentration and crystalline quality, making it the preferred method for fabricating photonic and electronic devices.[11]

SiCOI wafers

Many integrated photonic devices require thin SiC films deposited on a low refractive index material to achieve strong optical confinement. This has led to the development of SiCOI, in which a thin crystalline SiC layer is supported by a buried silicon dioxide layer in a structure analogous to silicon-on-insulator (SOI).[23]

Wafer bonding is the most common approach for fabricating SiCOI substrates. A thin SiC layer or an entire SiC wafer is bonded to an oxidized silicon handle wafer, after which the SiC layer is thinned by grinding and chemical mechanical polishing until the desired thickness is reached.[3]

Ion-cut techniques, also known as smart cut processes, use ion implantation to create a weakened layer within the SiC crystal. After wafer bonding, thermal treatment causes the implanted layer to split, transferring a thin crystalline SiC film onto an insulating substrate.[3]

Silicon carbide photonic devices

Silicon carbide supports the fabrication of a wide variety of passive and active photonic devices. Since the first demonstrations of integrated SiC waveguides, advances in wafer technology and microfabrication have enabled increasingly complex photonic circuits, including high-quality-factor resonators, electro-optic modulators and interferometric components. Most devices have been demonstrated in 3C-SiC and 4H-SiC, with the latter becoming the dominant platform for nonlinear and quantum photonics following the development of SiCOI substrates.[2]

Waveguides

Optical waveguides are the fundamental building blocks of silicon carbide photonic integrated circuits, providing optical confinement and routing between different components. The relatively high refractive index of SiC enables strong optical confinement while maintaining compatibility with silicon dioxide claddings.

Low-loss waveguides have been demonstrated in both 3C-SiC and 4H-SiC using dry etching techniques on bulk and SiCOI substrates and those fabricated on 4H-SiCOI have achieved, after process optimization, propagation losses around 0.4 dB/cm, making them suitable for high-quality integrated resonators.[12][6][24]

Resonators

Optical resonators are widely used in silicon carbide photonics to enhance light-matter interactions through multiple optical recirculations. Several resonator geometries have been demonstrated, including microring resonators, microdisk resonators and photonic crystal cavities.

  • Microring resonators are among the most extensively studied SiC photonic devices because of their compact footprint and compatibility with large-scale photonic integration. High-quality-factor microring resonators have been demonstrated in both 3C-SiC and 4H-SiC platforms and have been used to investigate Kerr nonlinear optics, frequency conversion and electro-optic modulation.[25][26]
  • Microdisk resonators were among the earliest SiC resonant devices to achieve high optical quality factors. Owing to their small mode volume and relatively simple fabrication, they have been employed for nonlinear optical experiments and for coupling to color centers in quantum photonic applications.[27]
  • Photonic crystal cavities provide extremely small optical mode volumes together with high quality factors, enabling strong enhancement of light-matter interactions. In SiC, these structures have been integrated with color centers to increase single-photon emission efficiency and to enhance spin-photon coupling.[28]

Modulators

Optical modulators are used to control the amplitude or phase of light propagating through integrated photonic circuits. In silicon carbide, modulation can be achieved through several physical mechanisms, including the Pockels electro-optic effect and thermo-optic tuning.

  • Electro-optic modulators. Among the active devices demonstrated on the SiC platform, electro-optic modulators have received the greatest attention because SiC supports the electro-optic effect, which is absent in silicon. An applied electric field modifies the refractive index of the waveguide, allowing the optical phase to be controlled without introducing free-carrier absorption.[29][30]
  • Thermo-optic tuning. The refractive index of silicon carbide also varies with temperature, enabling thermo-optic tuning of integrated photonic devices. Although the thermo-optic coefficient of SiC is significantly smaller than that of silicon, local heating has been used to tune the resonance wavelength of SiC microresonators for device characterization and nonlinear photonic experiments. Thermo-optic tuning is generally slower than electro-optic modulation but provides a simple method for compensating fabrication tolerances and stabilizing resonant photonic devices.[31]

Interferometers

Integrated interferometric devices are essential components of photonic integrated circuits for optical routing, beam splitting and quantum state manipulation. Silicon carbide interferometers have been demonstrated using directional couplers and Mach–Zehnder interferometers (MZIs).

  • Directional couplers consist of two closely spaced waveguides that exchange optical power through evanescent coupling. In SiC photonic circuits they are used as beam splitters for classical and quantum optical applications. Polarization-independent directional couplers have been demonstrated in 4H-SiCOI platforms.[32]
  • Mach-Zehnder interferometers in integrated photonics combine two cascaded directional couplers to produce controlled interference. Integrated SiC MZIs have been demonstrated for optical switching, modulation and single-photon manipulation. To have controlled interference it is possible to rely on electro-optic or thermo-optic phase shifters, making these devices promising building blocks for programmable photonic circuits.[33]

See also

References

  1. ↑ Boretti, A.; Li, Q.; Castelletto, S. (2025-02-01). "Pioneering the future with silicon carbide integrated photonics". Optics & Laser Technology. 181: 111910, 1–18. Bibcode:2025OptLT.18111910B. doi:10.1016/j.optlastec.2024.111910. ISSN 0030-3992.
  2. ↑ 2.0 2.1 Yi, Ailun; Wang, Chengli; Zhou, Liping; Zhu, Yifan; Zhang, Shibin; You, Tiangui; Zhang, Jiaxiang; Ou, Xin (2022-08-01). "Silicon carbide for integrated photonics". Applied Physics Reviews. 9 (3): 031302, 1–26. arXiv:2203.11646. Bibcode:2022ApPRv...9c1302Y. doi:10.1063/5.0079649. ISSN 1931-9401.
  3. ↑ 3.0 3.1 3.2 3.3 Ou, Haiyan; Shi, Xiaodong; Lu, Yaoqin; Kollmuss, Manuel; Steiner, Johannes; Tabouret, Vincent; Syväjärvi, Mikael; Wellmann, Peter; Chaussende, Didier (2023-01-22). "Novel Photonic Applications of Silicon Carbide". Materials. 16 (3): 1014, 1–29. Bibcode:2023Mate...16.1014O. doi:10.3390/ma16031014. ISSN 1996-1944. PMC 9919445 Check |pmc= value (help). PMID 36770020 Check |pmid= value (help).
  4. ↑ Lindquist, O. P. A.; Schubert, M.; Arwin, H.; Järrendahl, K. (2004-05-01). "Infrared to vacuum ultraviolet optical properties of 3C, 4H and 6H silicon carbide measured by spectroscopic ellipsometry". Thin Solid Films. The 3rd International Conference on Spectroscopic Ellipsometry. 455-456: 235–238. Bibcode:2004TSF...455..235L. doi:10.1016/j.tsf.2004.01.008. ISSN 0040-6090.
  5. ↑ Persson, C.; Lindefelt, U. (1996-10-15). "Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap". Physical Review B. 54 (15): 10257–10260. Bibcode:1996PhRvB..5410257P. doi:10.1103/PhysRevB.54.10257. PMID 9984797.
  6. ↑ 6.0 6.1 6.2 Castelletto, Stefania; Peruzzo, Alberto; Bonato, Cristian; Johnson, Brett C.; Radulaski, Marina; Ou, Haiyan; Kaiser, Florian; Wrachtrup, Joerg (2022-05-18). "Silicon Carbide Photonics Bridging Quantum Technology". ACS Photonics. 9 (5): 1434–1457. Bibcode:2022ACSP....9.1434C. doi:10.1021/acsphotonics.1c01775. ISSN 2330-4022.
  7. ↑ Ou, Haiyan (2024-08-29). "Silicon carbide, the next-generation integrated platform for quantum technology". Light: Science & Applications. 13 (1): 219, 1–3. Bibcode:2024LSA....13..219O. doi:10.1038/s41377-024-01515-0. ISSN 2047-7538. PMC 11358437 Check |pmc= value (help). PMID 39198384 Check |pmid= value (help). Unknown parameter |article-number= ignored (help)
  8. ↑ Majety, Sridhar; Saha, Pranta; Norman, Victoria A.; Radulaski, Marina (2022-04-01). "Quantum information processing with integrated silicon carbide photonics". Journal of Applied Physics. 131 (13): 130901, 1–17. doi:10.1063/5.0077045. ISSN 0021-8979.
  9. ↑ Jalali, Bahram; Fathpour, Sasan (2006-12-01). "Silicon Photonics". Journal of Lightwave Technology. 24 (12): 4600–4615. Bibcode:2006JLwT...24.4600J. doi:10.1109/JLT.2006.885782.
  10. ↑ La Via, Francesco; Alquier, Daniel; Giannazzo, Filippo; Kimoto, Tsunenobu; Neudeck, Philip; Ou, Haiyan; Roncaglia, Alberto; Saddow, Stephen E.; Tudisco, Salvatore (2023-06-06). "Emerging SiC Applications beyond Power Electronic Devices". Micromachines. 14 (6): 1200, 1–37. Bibcode:2023Micma..14.1200L. doi:10.3390/mi14061200. ISSN 2072-666X. PMC 10300968 Check |pmc= value (help). PMID 37374785 Check |pmid= value (help).
  11. ↑ 11.0 11.1 11.2 11.3 Kimoto, Tsunenobu; Cooper, James A. (2014). Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications (1 ed.). Wiley. pp. 11–12, 16–20, 39–41, 75, 111. doi:10.1002/9781118313534. ISBN 978-1-118-31352-7. Search this book on
  12. ↑ 12.0 12.1 Afridi, Adnan Ali; Lu, Yaoqin; Shi, Xiaodong; Wang, Ruixuan; Li, Jingwei; Li, Qing; Ou, Haiyan (2024-04-26). "4H–SiC microring resonators—Opportunities for nonlinear integrated optics". Applied Physics Letters. 124 (17): 170502. Bibcode:2024ApPhL.124q0502A. doi:10.1063/5.0198517. ISSN 0003-6951.
  13. ↑ Li, Jingwei; Wang, Ruixuan; Afridi, Adnan A.; Lu, Yaoqin; Shi, Xiaodong; Sun, Wenhan; Ou, Haiyan; Li, Qing (2024-02-21). "Efficient Raman Lasing and Raman–Kerr Interaction in an Integrated Silicon Carbide Platform". ACS Photonics. 11 (2): 795–800. arXiv:2311.06561. Bibcode:2024ACSP...11..795L. doi:10.1021/acsphotonics.3c01750. ISSN 2330-4022. PMC 10885207 Check |pmc= value (help). PMID 38405389 Check |pmid= value (help).
  14. ↑ Nava, F; Bertuccio, G; Cavallini, A; Vittone, E (2008-10-01). "Silicon carbide and its use as a radiation detector material". Measurement Science and Technology. 19 (10): 102001, 1–25. doi:10.1088/0957-0233/19/10/102001. hdl:11380/610830. ISSN 0957-0233.
  15. ↑ Persson, C.; Lindefelt, U. (1996). "Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap". Physical Review B. 54 (15): 10257–10260. Bibcode:1996PhRvB..5410257P. doi:10.1103/PhysRevB.54.10257.
  16. ↑ Wu, I. J.; Guo, G. Y. (2008-07-30). "Second-harmonic generation and linear electro-optical coefficients of SiC polytypes and nanotubes". Physical Review B. 78 (3). arXiv:0802.1314. Bibcode:2008PhRvB..78c5447W. doi:10.1103/PhysRevB.78.035447. ISSN 1098-0121. Unknown parameter |article-number= ignored (help)
  17. ↑ Castelletto, Stefania; Boretti, Alberto (2020-04-01). "Silicon carbide color centers for quantum applications". Journal of Physics: Photonics. 2 (2): 022001. Bibcode:2020JPhP....2b2001C. doi:10.1088/2515-7647/ab77a2. ISSN 2515-7647.
  18. ↑ Castelletto, Stefania (2021-06-01). "Silicon carbide single-photon sources: challenges and prospects". Materials for Quantum Technology. 1 (2): 023001. Bibcode:2021MatQT...1b3001C. doi:10.1088/2633-4356/abe04a. ISSN 2633-4356.
  19. ↑ Christle, David J.; Falk, Abram L.; Andrich, Paolo; Klimov, Paul V.; Hassan, Jawad Ul; Son, Nguyen T.; Janzén, Erik; Ohshima, Takeshi; Awschalom, David D. (2015). "Isolated electron spins in silicon carbide with millisecond coherence times". Nature Materials. 14 (2): 160–163. arXiv:1406.7325. Bibcode:2015NatMa..14..160C. doi:10.1038/nmat4144. ISSN 1476-4660. PMID 25437259.
  20. ↑ Osipov, Artem A.; Iankevich, Gleb A.; Speshilova, Anastasia B.; Osipov, Armenak A.; Endiiarova, Ekaterina V.; Berezenko, Vladimir I.; Tyurikova, Irina A.; Tyurikov, Kirill S.; Alexandrov, Sergey E. (2020-11-17). "High-temperature etching of SiC in SF6/O2 inductively coupled plasma". Scientific Reports. 10 (1): 19977. Bibcode:2020NatSR..1019977O. doi:10.1038/s41598-020-77083-1. ISSN 2045-2322. PMC 7673126 Check |pmc= value (help). PMID 33203949 Check |pmid= value (help).
  21. ↑ Xing, Peng; Ma, Danhao; Ooi, Kelvin J. A.; Choi, Ju Won; Agarwal, Anuradha Murthy; Tan, Dawn (2019-05-15). "CMOS-Compatible PECVD Silicon Carbide Platform for Linear and Nonlinear Optics". ACS Photonics. 6 (5): 1162–1167. Bibcode:2019ACSP....6.1162X. doi:10.1021/acsphotonics.8b01468. ISSN 2330-4022.
  22. ↑ Zheng, Yi; Yi, Ailun; Pu, Minhao; Chang, Bingdong; You, Tiangui; Huang, Kai; Ou, Xin; Ou, Haiyan (2018-12-30). "High-Confinement, High-Q Microring Resonators on Silicon Carbide-On-Insulator (SiCOI)". Asia Communications and Photonics Conference (ACP). IEEE: 1–3. Bibcode:2018acp..conf..519Z. doi:10.1109/ACP.2018.8595751. ISBN 978-1-5386-6158-1.
  23. ↑ Lukin, Daniil M.; Dory, Constantin; Guidry, Melissa A.; Yang, Ki Youl; Mishra, Sattwik Deb; Trivedi, Rahul; Radulaski, Marina; Sun, Shuo; Vercruysse, Dries; Ahn, Geun Ho; Vučković, Jelena (2020). "4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics". Nature Photonics. 14 (5): 330. Bibcode:2020NaPho..14..330L. doi:10.1038/s41566-019-0556-6. ISSN 1749-4893.
  24. ↑ Liu, Y.M.; Prucnal, P.R. (1993-06-30). "Low-loss silicon carbide optical waveguides for silicon-based optoelectronic devices". IEEE Photonics Technology Letters. 5 (6): 704–707. Bibcode:1993IPTL....5..704L. doi:10.1109/68.219717. ISSN 1041-1135.
  25. ↑ Powell, Keith; Shams-Ansari, Amirhassan; Desai, Smit; Austin, Mitchell; Deng, Jiangdong; Sinclair, Neil; Lončar, Marko; Yi, Xiaoke (2020-02-17). "High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing". Optics Express. 28 (4): 4938. Bibcode:2020OExpr..28.4938P. doi:10.1364/OE.381601. ISSN 1094-4087. PMID 32121724 Check |pmid= value (help).
  26. ↑ Shi, Xiaodong; Fan, Weichen; Hansen, Anders Kragh; Chi, Mingjun; Yi, Ailun; Ou, Xin; Rottwitt, Karsten; Ou, Haiyan (October 2021). "Thermal Behaviors and Optical Parametric Oscillation in 4H-Silicon Carbide Integrated Platforms". Advanced Photonics Research. 2 (10). Bibcode:2021AdPhR...200068S. doi:10.1002/adpr.202100068. ISSN 2699-9293. Unknown parameter |article-number= ignored (help)
  27. ↑ Lu, Xiyuan; Lee, Jonathan Y.; Feng, Philip X.-L.; Lin, Qiang (2013-04-15). "Silicon carbide microdisk resonator". Optics Letters. 38 (8): 1304–1306. Bibcode:2013OptL...38.1304L. doi:10.1364/OL.38.001304. ISSN 1539-4794. PMID 23595466.
  28. ↑ Yamada, Shota; Song, Bong-Shik; Asano, Takashi; Noda, Susumu (2011-11-14). "Silicon carbide-based photonic crystal nanocavities for ultra-broadband operation from infrared to visible wavelengths". Applied Physics Letters. 99 (20): 201102. Bibcode:2011ApPhL..99t1102Y. doi:10.1063/1.3647979. ISSN 0003-6951.
  29. ↑ Powell, Keith; Li, Liwei; Shams-Ansari, Amirhassan; Wang, Jianfu; Meng, Debin; Sinclair, Neil; Deng, Jiangdong; Lončar, Marko; Yi, Xiaoke (2022-04-05). "Integrated silicon carbide electro-optic modulator". Nature Communications. 13 (1): 1851. Bibcode:2022NatCo..13.1851P. doi:10.1038/s41467-022-29448-5. ISSN 2041-1723. PMC 8983721 Check |pmc= value (help). PMID 35383188 Check |pmid= value (help).
  30. ↑ Fan, Tianren; Wu, Xi; Vangapandu, Sai R. M.; Hosseinnia, Amir H.; Eftekhar, Ali A.; Adibi, Ali (2021-05-01). "Racetrack microresonator based electro-optic phase shifters on a 3C silicon-carbide-on-insulator platform". Optics Letters. 46 (9): 2135–2138. arXiv:2102.05817. Bibcode:2021OptL...46.2135F. doi:10.1364/OL.422560. ISSN 0146-9592. PMID 33929437 Check |pmid= value (help).
  31. ↑ Mallemace, Elisa D.; Lu, Yaoqin; Shi, Xiaodong; Chaussende, Didier; Tabouret, Vincent; Rao, Sandro; Ou, Haiyan; Della Corte, Francesco G. (2023). Kibler, B.; Millot, G.; Segonds, P., eds. "Thermo-optic phase shifter based on amorphous silicon carbide". EPJ Web of Conferences. 287. Bibcode:2023EPJWC.28714010M. doi:10.1051/epjconf/202328714010. ISSN 2100-014X. Unknown parameter |article-number= ignored (help)
  32. ↑ Shi, Xiaodong; Lu, Yaoqin; Ou, Haiyan (2023-02-01). "High-performance silicon carbide polarization beam splitting based on an asymmetric directional couplers for mode conversion". Optics Letters. 48 (3): 616–619. Bibcode:2023OptL...48..616S. doi:10.1364/OL.481314. ISSN 1539-4794.
  33. ↑ Shi, Xiaodong; Lu, Yaoqin; Peng, Nianhua; Rottwitt, Karsten; Ou, Haiyan (2022-12-01). "High-Performance Polarization-Independent Beam Splitters and MZI in Silicon Carbide Integrated Platforms for Single-Photon Manipulation". Journal of Lightwave Technology. 40 (23): 7626–7633. Bibcode:2022JLwT...40.7626S. doi:10.1109/JLT.2022.3169661. ISSN 0733-8724.

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