Thermal-assisted switching
Thermal-assisted switching,[1] or TAS, is one of the new second-generation approaches to magnetoresistive random-access memory (MRAM) currently being developed. A few different designs have been proposed, but all rely on the idea of reducing the required switching fields by heating.[2] The first design's cell, which was proposed by James M. Daughton and co-workers, had a heating element, an MRAM bit, an orthogonal digit line,[2] and used a low Curie point ferromagnetic material as the storage layer.[3] In a second and more promising design, which was developed by the Spintec Laboratory (France) and subsequently licensed to Crocus Technology, the storage layer is made of a ferromagnetic and an antiferromagnetic layer. When the cell is heated by flowing a heating current through the junction and the temperature exceeds the "blocking temperature" (Tb), the ferromagnetic layer is freed, and the data is written by application of a magnetic field while cooling down.[2] When idle, the cell's temperature is below the blocking temperature and much more stable.[4]
This approach offers multiple advantages over previous MRAM technologies:[3]
- Because the write selection is temperature-driven, it eliminates write-selectivity problems;
- It is a low-power approach as only one magnetic field is required to write, and because the cell stability and magnetic susceptibility are decoupled as a result of the introduction of the blocking temperature; and
- It is thermally stable due to the exchange bias of the storage layer.
References
- ↑ Shah, Khurshed Ahmad; Khanday, Farooq Ahmad (2020-08-03). Nanoscale Electronic Devices and Their Applications. CRC Press. ISBN 978-1-000-16356-8. Search this book on
- ↑ 2.0 2.1 2.2 Sousa RC, Prejbeanu IL (12 October 2005). Non-volatile magnetic random access memories (MRAM) (PDF). Crocus Technology. Retrieved 2012-12-23.
- ↑ 3.0 3.1 Prejbeanu IL, Kerekes M, Sousa RC, Sibuet H, Redon O, Dieny B, Nozières JP (n.d.). Thermally assisted MRAM (PDF). Crocus Technology. Retrieved 2012-12-23.
- ↑
Hoberman, Barry (n.d.). The Emergence of Practical MRAM (PDF). Crocus Technology. Archived from the original (PDF) on 2013-10-21. Retrieved 2012-12-23. Unknown parameter
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