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Udo Pohl

From EverybodyWiki Bios & Wiki


File:UdoWPohl2018.jpg
Udo W. Pohl (2018)

Udo W. Pohl (born August 14, 1955 in Düsseldorf, Germany) is a German physicist and was Professor at the Technical University of Berlin. His work on semiconductor physics focuses on quantum dots.

Education and career

Pohl received his physics education from the RWTH Aachen University, Germany, the Free University of Berlin and the Technical University of Berlin, Germany. There he received his PhD in 1988 in the field of optical spectroscopy of Transition metal impurities in II-VI semiconductors;[1][2][3][4] examiners were Hans-Eckhart Gumlich [de] and Daniel Curie.

In 1989 Pohl became head of the "Materials Lab" at the Institute of Solid State Physics of the Technical University of Berlin (since 2004 Center of Nanophotonics, with Dieter Bimberg [de] as CEO). Pohl coordinated the installation of a modernen semiconductor process technology, the installation of equipment for the precise fabrication of crystalline semiconductot structures, and the installation of a high performance x-ray difractometry. In addition to basic studies on growth of semiconductor layers [5][6][7][8][9][10] his scientific work focuses particularly on the structural and optical properties of quantum dots based on II-VI[11][12][13] and III-V[14][15][16][17] compound semiconductors. Using active GaAs-based III-V-quantum dots, novel devices[18] such as lasers[19][20][21] and single-photon emitters[22][23] could be realised at the Institute of Solid State Physics with his involvement.

In 1999 Pohl qualified as a professor with works on epitaxy (crystalline layer growth) of semiconductors. In 2009 he was appointed adjunct professor for experimental physics at Technical University of Berlin.

In 2013 Pohl published the first edition of the textbook Epitaxy of Semiconductors. With Karl Wolfgang Boer he wrote the handbook Semiconductor Physics, the first edition published in 2018. He additionally authored 13 book chapters, over 200 journal articles on optical and structural properties of semiconductors, and 3 Patents. Pohl is co-editor of the Springer Series in Materials Science.

Pohl is member of the German Physical Society, has given keynote addresses at international conferences, and participated in their program committees. Besides his activities in physics Pohl is member of the supervisory board of the Pumacy Technologies AG and is trustee of the foundation Intakt Umweltstiftung.

Monographs

  • Udo W. Pohl, Epitaxy of Semiconductors.
    1. Edition: Introduction to Physical Principles, Springer Heidelberg New York Dordrecht London, 2013. ISBN 978-3-642-32969-2.
    2. Edition: Physics and Fabrication of Heterostructures, Springer Nature Switzerland AG, Cham, Switzerland, 2020. ISBN 978-3-030-43868-5.
  • Karl W. Böer, Udo W. Pohl, Semiconductor Physics.
    1. Edition: Springer International Publishing AG, Cham, Switzerland, 2018. ISBN 978-3-319-69148-0.
    2. Edition: Springer Nature Switzerland AG, Cham, Switzerland, 2023. ISBN 978-3-031-18285-3.

Selected contributions to books

  • U. W. Pohl, A. Strittmatter, A. Schliwa, M. Lehmann, T. Niermann, T. Heindel, S. Reitzenstein, M. Kantner, U. Bandelow, T. Koprucki, H.-J. Wünsche, Stressor-Induced Site Control of Quantum Dots for Single-Photon Sources. In: M. Kneissl, A. Knorr, S. Reitzenstein, A. Hoffmann (Eds.), Semiconductor Nanophotonics, pp. 52 – 90, Springer Nature, Cham Switzerland 2020.
  • U. W. Pohl, Low-Dimensional Semiconductors. In: H. Warlimont, W. Martienssen (Eds.), Handbook of Materials Data, 2nd Edn., pp. 1077 – 1100, Springer Nature, Cham Switzerland 2018.
  • U. W. Pohl, Metalorganic vapor phase epitaxy of diluted nitrides and arsenide quantum dots. In: G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley (Eds.), Handbook of Crystal Growth, pp. 1133 – 1152, Springer, Berlin, Germany 2010.
  • U. W. Pohl, D. Bimberg, Semiconductor Disk Lasers based on Quantum Dots. In: O. G. Okhotnikov (Ed.), Semiconductor Disk Lasers, pp. 187 – 212, Wiley, Weinheim 2010.
  • U. W. Pohl, InAs/GaAs quantum qots with multimodal size distribution. In: Z. M. Wang (Ed.), Self-assembled quantum dots, pp. 43 – 66, Springer, New York, 2008.
  • U. W. Pohl, S. Rodt, A. Hoffmann, Optical properties of III-V quantum dots. In: D. Bimberg (Ed.), Semiconductor Nanostructures, pp. 269 – 299, Springer, Berlin 2008.
  • U. W. Pohl, A. Strittmatter, Control of self-organized In(Ga)As/GaAs quantum dot growth. In: D. Bimberg (Ed.), Semiconductor Nanostructures, pp. 41 – 65, Springer, Berlin 2008.

Patents

  • Ms. Straßburg, O. Schulz, U. W. Pohl, D. Bimberg, Kontaktstruktur für ein elektrisch betriebenes II-VI-Halbleiterbauelement und Verfahren zu deren Herstellung, Deutsches Patent Nr. 19955280 (2000). (in German)
  • Ms. Straßburg, O. Schulz, U. W. Pohl, D. Bimberg, Contact structure for an electric II/VI semiconductor component and a method for the production of the same, US. Pat. 6,673,641 B1 (2004); Contact structure for an electrically operated II/VI semiconductor element and a process for the production thereof, US. Pat. 6,893,950 B1 (2005).
  • A. Strittmatter, A. Schliwa, T. D. Germann, U. W. Pohl, V. Gaysler, J.-H. Schulze, Layer Assembly, US. Pat. 8,349,712 B2 (2013).

References

  1. ↑ U. W. Pohl, H.-E. Gumlich, Optical transitions of different Mn-ion pairs in ZnS, Physical Review B 40, 1194-1201 (1989).
  2. ↑ U. W. Pohl, A. Ostermeier, W. Busse, H.-E. Gumlich, Influence of stacking faults in polymorphic ZnS on the d5 crystal field states of Mn2+, Physical Review B 42, 5751-5758 (1990).
  3. ↑ G. Goetz, U. W. Pohl, H.-J. Schulz, Optical properties of vanadium ions in ZnSe, Journal of Physics: Condensed Matter 4, 8253-8266 (1992).
  4. ↑ M. U. Lehr, B. Litzenburger, J. Kreissl, U. W. Pohl, H. Selber, H.-J. Schulz, A. Klimakow, L. Worschech, Identification of near-infrared Cr2+ luminescence in ZnSe, Journal of Physics: Condensed Matter 9, 753-763 (1997).
  5. ↑ K. Bellmann, U. W. Pohl, C. Kuhn, T. Wernicke, M. Kneissl, Controlling the morphology transition between step-flow growth and step-bunching growth, J. Crystal Growth 478, 197 (2017).
  6. ↑ U. W. Pohl, C. Möller, K. Knorr, W. Richter, J. Gottfriedsen, H. Schumann, A. Fielicke, K. Rademann, Tertiarybutylhydrazine: a new precursor for the MOVPE of III nitrides, Materials Science and Engineering B 59, 20-23 (1999).
  7. ↑ L. Müller-Kirsch, R. Heitz, U. W. Pohl, D. Bimberg, I. Häusler, H. Kirmse, W. Neumann, Temporal evolution of GaSb/GaAs quantum dot formation, Applied Physics Letters 79, 1027-1029 (2001).
  8. ↑ U. W. Pohl, K. Pötschke, I. Kaiander, J.-T. Zettler, D. Bimberg, Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy. J. Crystal Growth 272, 143-147 (2004).
  9. ↑ U. W. Pohl, J. Gottfriedsen, H. Schumann, Nitrogen doping of MOVPE-grown ZnSe using hydrazine derivatives, J. Crystal Growth 209, 683-686 (2000).
  10. ↑ A. G. Kontos, E. Anastassakis, N. Chrysanthakopoulos, M. Calamiotou, U. W. Pohl, Strain profiles in overcritical (001) ZnSe/GaAs heteroepitaxial layers, J. Applied Physics 86, 412-417 (1999).
  11. ↑ V. Türck, S. Rodt, O. Stier, R. Heitz, R. Engelhardt, U. W. Pohl, D. Bimberg, R. Steingrüber, Effect of random field fluctuations on excitonic transitions of individual CdSe quantum dots, Physical Review B 61, 9944 (2000).
  12. ↑ S. Rodt, V. Türck, R. Heitz, F. Guffarth, R. Engelhardt, U. W. Pohl, M. Straßburg, M. Dworzak, A. Hoffmann, D. Bimberg, Lateral carrier transfer in CdxZn1-xSe/ZnSySe1-y quantum dot layers, Physical Review B 67, 235327 (2003).
  13. ↑ U. W. Pohl, R. Engelhardt, V. Türck, D. Bimberg, MOCVD of vertically stacked CdSe/ZnSSe quantum islands, J. Crystal Growth 195, 569-573 (1998).
  14. ↑ U. W. Pohl, K. Pötschke, A. Schliwa, F. Guffarth, D. Bimberg, N. D. Zakharov, P. Werner, M. B. Lifshits, V. A. Shchukin, D. E. Jesson, Evolution of a multimodal distribution of self-organized InAs/GaAs quantum dots, Physical Review B 72, 245332 (2005).
  15. ↑ R. Seguin, A. Schliwa, S. Rodt, K. Pötschke, U. W. Pohl, D. Bimberg, Size-dependent exciton fine-structure splitting in self-organized InAs/GaAs quantum dots, Physical Review Letters 95, 257402 (2005).
  16. ↑ S. Harrison, M. P. Young, P. D. Hodgson, R. J. Young, M. Hayne, L. Danos, A. Schliwa, A. Strittmatter, A. Lenz, H. Eisele, U. W. Pohl, D. Bimberg, Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs, Physical Review B 93, 085302 (2016).
  17. ↑ A. Lenz, R. Timm, H. Eisele, Ch. Hennig, S. K. Becker, R. L. Sellin, U. W. Pohl, D. Bimberg, M. Dähne, Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix, Applied Physics Letters 81, 5150-5152 (2002).
  18. ↑ D. Bimberg, U. W. Pohl, Quantum dots: promises and accomplishments, Materials Today 14, 388 (2011).
  19. ↑ R. Sellin, I. Kaiander, D. Ouyang, T. Kettler, U. W. Pohl, D. Bimberg, N. D. Zakharov, P. Werner, Alternative-precursor MOCVD of self-organized InGaAs/GaAs quantum dots and quantum dot lasers, Applied Physics Letters 82, 841-843 (2003).
  20. ↑ B. Herzog, B Lingnau, M. Kolarczik, S. Helmrich, A.W. Achtstein, K. Thommes, F. Alhussein, D. Quandt, A. Strittmatter, U.W. Pohl, O. Brox, M. Weyers, U. Woggon, K. Lüdge, N. Owschimikow, Broadband semiconductor light sources operating at 1060 nm based on InAs:Sb/GaAs submonolayer quantum dots, IEEE J. Selected Topics Quantum Electronics 25, 1900310 (2019).
  21. ↑ T. Germann, A. Strittmatter, J. Pohl, U. W. Pohl, D. Bimberg, J. Rautiainen, M. Guina, O.G. Okhotnikov, High-power semiconductor disk-laser based on InAs/GaAs submonolayer quantum dots, Applied Physics Letters 92, 101123 (2008).
  22. ↑ W. Unrau, D. Quandt, J.-H. Schulze, T. Heindel, T.D. Germann, O. Hitzemann, A. Strittmatter, S. Reitzenstein, U.W. Pohl, D. Bimberg, Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection, Applied Physics Letters 101, 211119 (2012).
  23. ↑ F. Kießling, T. Niermann, M. Lehmann, J.-H. Schulze, A. Strittmatter, A. Schliwa, U. W. Pohl, Strain field of a buried oxide aperture, Physical Review B 91, 075306 (2015).


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