CCM devices
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Charge configuration memory (CCM) is a 2-terminal experimental non-volatile memory device based on the manipulation of domain walls in the charge density wave material 1T-TaS2 [1]. The device functionality is similar to a memristor, with high resistance ratios (up to 1000) at low temperatures. Intrinsic asymmetry of write and erase processes, low-temperature operation and extremely low switching energy combined with ultra-high high speed. The device is potentially useful for integration in Josephson-junction based computing, including mK temperatures and other low-temperature applications, such as flux-quantum logic computers.
Principles of operation[edit]
Electrical resistance in the layered transition metal dichalcogenide material 1T-TaS2 changes drastically when domains are created by means of external charge injection. The effect was discovered in photoexcitation experiments [2], but fast and energy efficient resistance switching was soon confirmed in all-electrical circuits[3]. The mechanism is thought to be the result of band structure change in the domain state. Important factors that contribute to the large resistance change are in-plane strain and inter-layer stacking of CDW orders [4] in the domain state. Because domain states are near-degenerate in energy, transitions between different domain states may require very small amounts of energy.
Comparison with other devices[edit]
The main advantage of the CCM device is extremely fast switching and high energy efficiency. The device is considered non-volatile at temperatures <20 K. Recent surveys favorably compare CCM devices with other concurrent concepts in terms of switching speed, energy efficiency and practicability for cryogenic applications.[5] [6]
Outlook and design challenges[edit]
The device operates in true non-volatile mode only at low temperatures, the energy barrier for relaxation being in the range of 200 ~ 2000 K, which is controlled by the strain exerted on the 1T-TaS2 crystal by the substrate in the fabrication process. Thus compatibility with substrates thus needs to be considered in specific applications. Thin films of 1T-TaS2 that can be used for CCM devices have been grown on various substrates by molecular beam epitaxy and chemical vapour deposition.
References[edit]
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- ↑ Wilson, J.A.; Di Salvo, F.J.; Mahajan, S. (1975). "Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides". Advances in Physics. 24 (2): 117–201. doi:10.1080/00018737500101391.
- ↑ Stojchevska, L.; Vaskivskyi, I.; Mertelj, T.; Kusar, P.; Svetin, D.; Brazovskii, S.; Mihailovic, D. (2014). "Ultrafast Switching to a Stable Hidden Quantum State in an Electronic Crystal". Science. 344 (6180): 177–180. arXiv:1401.6786. Bibcode:2014Sci...344..177S. doi:10.1126/science.1241591. ISSN 0036-8075. PMID 24723607. Unknown parameter
|s2cid=ignored (help) - ↑ Vaskivskyi, I.; Gospodaric, J.; Brazovskii, S.; Svetin, D.; Sutar, P.; Goreshnik, E.; Mihailovic, I.A.; Mertelj, T.; Mihailovic, D. (2014). "Ultrafast Switching to a Stable Hidden Quantum State in an Electronic Crystal". Science. 344 (6180): 177–180. doi:10.1126/sciadv.1500168. ISSN 0036-8075. PMC 4646782. PMID 26601218.
- ↑ Ritschel, Tobias (2015). "Orbital textures and charge density waves in transition metal dichalcogenides". Nature Physics. 11 (4): 328–331year=2015. arXiv:1409.7341. Bibcode:2015NatPh..11..328R. doi:10.1038/nphys3267. Unknown parameter
|s2cid=ignored (help) - ↑
Mihailovic, D.; Svetin, D.; Vaskivskyi, I.; Venturini, R.; Lipovsek, B.; Mraz, A. (2021). "Ultrafast non-thermal and thermal switching in charge configuration memory devices based on 1T-TaS2". Appl. Phys. Lett. 119 (1): 013106. Bibcode:2021ApPhL.119a3106M. doi:10.1063/5.0052311. Unknown parameter
|s2cid=ignored (help) - ↑
Mraz, Anze (2022). "Charge Configuration Memory Devices: Energy Efficiency and Switching Speed". Nano Lett. 22 (12): 4814–4821. Bibcode:2022NanoL..22.4814M. doi:10.1021/acs.nanolett.2c01116. PMC 9228410 Check
|pmc=value (help). PMID 35688423 Check|pmid=value (help).
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