CCM devices
Charge configuration memory (CCM) is a 2-terminal experimental non-volatile memory device based on the manipulation of domain walls in the charge density wave material 1T-TaS2 [1]. The device functionality is similar to a memristor, with high resistance ratios (up to 1000) at low temperatures. Intrinsic asymmetry of write and erase processes, low-temperature operation and extremely low switching energy combined with ultra-high speed. The device is potentially useful for integration in Josephson-junction based computing, including mK temperatures and other low-temperature applications, such as flux-quantum logic computers.
Principles of operation
Electrical resistance in the layered transition metal dichalcogenide material 1T-TaS2 changes drastically when domains are created by means of external charge injection. The effect was discovered in photoexcitation experiments [2], but fast and energy efficient resistance switching was soon confirmed in all-electrical circuits[3]. The mechanism is thought to be the result of band structure change in the domain state. Important factors that contribute to the large resistance change are in-plane strain and inter-layer stacking of CDW orders [4] in the domain state. Because domain states are near-degenerate in energy, transitions between different domain states may require very small amounts of energy.
Comparison with other devices
The main advantage of the CCM device is extremely fast switching and high energy efficiency. The device is considered non-volatile at temperatures <20 K. Recent surveys favorably compare CCM devices with other concurrent concepts in terms of switching speed, energy efficiency and practicability for cryogenic applications.[5] [6]
Outlook and design challenges
The device operates in true non-volatile mode only at low temperatures, the energy barrier for relaxation being in the range of 200 ~ 2000 K, which is controlled by the strain exerted on the 1T-TaS2 crystal by the substrate in the fabrication process. Thus compatibility with substrates needs to be considered in specific applications. Thin films of 1T-TaS2 that can be used for CCM devices have been grown on various substrates by molecular beam epitaxy and chemical vapour deposition.
References
 |
Wikimedia Commons has media related to Charge configuration memory. |
- ↑ Wilson, J.A.; Di Salvo, F.J.; Mahajan, S. (1975). "Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides". Advances in Physics. 24 (2): 117–201. doi:10.1080/00018737500101391.
- ↑ Stojchevska, L.; Vaskivskyi, I.; Mertelj, T.; Kusar, P.; Svetin, D.; Brazovskii, S.; Mihailovic, D. (2014). "Ultrafast Switching to a Stable Hidden Quantum State in an Electronic Crystal". Science. 344 (6180): 177–180. arXiv:1401.6786. Bibcode:2014Sci...344..177S. doi:10.1126/science.1241591. ISSN 0036-8075. PMID 24723607. Unknown parameter
|s2cid=ignored (help) - ↑ Vaskivskyi, I.; Gospodaric, J.; Brazovskii, S.; Svetin, D.; Sutar, P.; Goreshnik, E.; Mihailovic, I.A.; Mertelj, T.; Mihailovic, D. (2014). "Ultrafast Switching to a Stable Hidden Quantum State in an Electronic Crystal". Science. 344 (6180): 177–180. doi:10.1126/sciadv.1500168. ISSN 0036-8075. PMC 4646782. PMID 26601218.
- ↑ Ritschel, Tobias (2015). "Orbital textures and charge density waves in transition metal dichalcogenides". Nature Physics. 11 (4): 328–331. arXiv:1409.7341. Bibcode:2015NatPh..11..328R. doi:10.1038/nphys3267. Unknown parameter
|s2cid=ignored (help) - ↑
Mihailovic, D.; Svetin, D.; Vaskivskyi, I.; Venturini, R.; Lipovsek, B.; Mraz, A. (2021). "Ultrafast non-thermal and thermal switching in charge configuration memory devices based on 1T-TaS2". Appl. Phys. Lett. 119 (1): 013106. Bibcode:2021ApPhL.119a3106M. doi:10.1063/5.0052311. Unknown parameter
|s2cid=ignored (help) - ↑
Mraz, Anze (2022). "Charge Configuration Memory Devices: Energy Efficiency and Switching Speed". Nano Lett. 22 (12): 4814–4821. Bibcode:2022NanoL..22.4814M. doi:10.1021/acs.nanolett.2c01116. PMC 9228410 Check
|pmc=value (help). PMID 35688423 Check|pmid=value (help).
This article "CCM devices" is from Wikipedia. The list of its authors can be seen in its historical and/or the page Edithistory:CCM devices. Articles copied from Draft Namespace on Wikipedia could be seen on the Draft Namespace of Wikipedia and not main one.
