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Hybrid vapour phase epitaxy

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Hybrid Vapour Phase Epitaxy (HVPE) is used for high rate crystal growth. For example during Gallium nitride growth, HVPE uses ammonia(NH3), and GaCl2, which is formed by Hydrogen chloride flowing over Gallium melt, as sources with purified N2 as carrier gas. The growth is typically performed at very high temperature, such as 1100 oC.[1]

References[edit]

  1. Bernard Gil, Group III Nitride Semiconductor Compounds Physics and Applications, Oxford science, 1998



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